The purpose of doping

In the manufacture of semiconductors, doping is considered an integral technological process (along with deposition and etching). Its main purpose is to correct the type of conductivity and carrier concentration in the semiconductor to achieve certain properties (to obtain the desired smoothness of the pn junction). The most common elements for doping silicon are phosphorus P and arsenic As (to obtain the n-type conductivity) and boron B (p-type).

Doping methods

Three different doping techniques are known today: ion implantation, thermodiffusion and neutron-transmutation doping.

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